| PART |
Description |
Maker |
| MT48LC4M16A2P-75 MT48LC4M16A2P-75LIT MT48LC16M4A2P |
4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Micron Technology, Inc.
|
| H57V1262GTR-50X H57V1262GTR-60X H57V1262GTR-70X H5 |
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M52D128168A-7.5TG |
2M x 16 Bit x 4 Banks Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
| W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V1 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料
|
HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| V54C3256164VDLF7PC V54C3256404VDLF7PC V54C3256804V |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 ROHS COMPLIANT, MO-210, FBGA-60
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
ProMOS Technologies, Inc.
PROMOS TECHNOLOGIES INC
|
|
